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Trimethylindium (abbr: TMI), In(CH3)3, (CAS #: 3385-78-2) is the preferred metalorganic source of Indium for Metalorganic vapour phase epitaxy (MOVPE) of indium-containing compound semiconductors, such as InP, InAs, InN, InSb, GaInAs, InGaN, AlInGaP, AlInP, AlInGaNP etc. TMI is a white, crystalline and sublimable solid, with melting point 88º C. TMI is also known to be pyrophoric, i.e. it ignites sponteneously upon contact with air. Recent advancements in synthetic strategies to TMI have led to novel “ether-free” process that affords the highest purity TMI <ref>Journal of Crystal Growth DOI:10.1016/S0022-0248(02)01854-7</ref>, also known as OptoGrade™ TMI. The high purity of OptoGrade™ TMI is characterized by chemical analyses (NMR, ICP-MS, ICP-OES, GC-MS) of manufactured lots, followed by rigorous film growth tests and measurements of electrical properties of grown films. For example, InP films grown using OptoGrade™ TMI and high purity phosphine under optimized MOVPE conditions (i.e. growth temperature 600 °C and V/III ratio of 450–800) have offered some of the excellent electron mobilities so far, i.e. Hall mobilities as high as 287,000 cm2/Vs at 77 K and 5400 cm2/Vs at 300 K <ref>Journal of Crystal Growth DOI:10.1016/j.jcrysgro.2004.09.006</ref>. The background carrier concentration was also reported to be as low as about 6×1013 cm−3, which is the best performance from semiconductor industry perspectives. These recent advancements and novel synthetic strategies have essentially eliminated the need of post-synthesis purifications such as adduct purification. The new ether-free process is also reported to offer substantially reduced batch-to-bach variation and improved quality consistency in the manufacturing of TMI.

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